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Bias considerations in d.c. transistor amplifiers

机译:直流中的偏差注意事项晶体管放大器

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General expressions for gain and thermal drift in a d.c. transistor amplifier are discussed. Variations of the transistor parameters due to temperature are shown, and permissible simplifications in the general expressions are introduced. A figure of merit¿termed drift/gain ratio¿is defined, which permits comparison of differentcircuits and transistors with respect to their thermal behaviour in d.c. amplifiers. It is shown that the desired condition is obtained whenthis ratio becomes a minimum, while a certain necessary gain, chosenby the designer, is maintained. Successively the common-collector, common-emitter and common-base configurations are analysed forsingle stages. Plots computed for particular transistor parametervalues aid the reader in arriving at an optimum design. Multi-stage amplifiers are discussed, using the drift/gain ratio toanalyse direct-coupled feedback amplifiers. After a detailed considerationof a 2- and 3-stage direct-coupled amplifier, experimentalverification of some of the results concludes the paper.
机译:直流增益和热漂移的一般表达式讨论了晶体管放大器。示出了由于温度引起的晶体管参数的变化,并且引入了通用表达式中的允许的简化。定义了一个称为漂移/增益比的优值图,该图允许比较不同电路和晶体管在直流方面的热行为。放大器。结果表明,当该比率变为最小值时,便获得了所需的条件,同时保持了设计者选择的一定的必要增益。依次分析了单级的公共集电极,公共发射极和公共基极配置。针对特定晶体管参数值计算出的图有助于读者达到最佳设计。利用漂移/增益比分析直接耦合反馈放大器,讨论了多级放大器。在详细考虑了2级和3级直接耦合放大器之后,对某些结果进行了实验验证,得出了本文的结论。

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