Experimental analysis of current conduction through thermally grown SiO<sub>2</sub> on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism

Sanjeev K. Gupta; A. Azam; J. Akhtar

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Experimental analysis of current conduction through thermally grown SiO₂ on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism

机译：利用Poole-Frenkel机理对厚外延4H-SiC上热生长SiO _{2 进行电流传导的实验分析}

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《Pramana》 |2010年第2期|325-330|共6页
作者
Sanjeev K. Gupta; A. Azam; J. Akhtar;
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Sensors and Nano-Technology Group, Semiconductor Devices Area, Central Electronics Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), Pilani, 333 031, India;

Department of Applied Physics, Z.H. College of Engineering and Technology, Aligarh Muslim University, Aligarh, 202 002, India;

Sensors and Nano-Technology Group, Semiconductor Devices Area, Central Electronics Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), Pilani, 333 031, India;

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1. Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poolea€“Frenkel mechanism [J] . A Azam2, J Akhtar1, Sanjeev K Gupta1 2 Pramana . 2010,第2期

机译：利用Poolea-Frenkel机理在厚外延4H-SiC上通过热生长SiO2进行电流传导的实验分析
2. Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC [J] . Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Journal of Applied Physics . 2015,第2期

机译：4H-SiC上热生长氧化物漏电流传导机理的温度依赖性分析
3. Current conduction mechanisms of atomic-layer-deposited Al 2O3itrided SiO2 stacking gate oxide on 4H-SiC [J] . Cheong K.Y., Lockman Z., Aziz A., International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics . 2010,第27期

机译：在4H-SiC上沉积原子层的Al 2O3 /氮化的SiO2堆叠栅氧化物的电流传导机理
4. Comparisons of band alignments and current conduction mechanisms between SiO_2/4H-SiC (0001) and (1-100) systems with NO-POA [C] . Tae-Hyeon Kil, Atsushi Tamura, Masato Noborio, 応用物理学会学術講演会;応用物理学会 . 2020

机译：SiO_2 / 4H-SIC（0001）与NO-POA系统（1-100）系统之间的带对准和电流传导机制的比较
5. CONDUCTION MECHANISMS IN THICK FILM RESISTORS. [D] . HIMELICK, JAMES MAX. 1980

机译：厚膜电阻的传导机制。
6. Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers [O] . Keiko Masumoto, Kazutoshi Kojima, Hiroshi Yamaguchi 2020

机译：影响3C夹杂物发生的因素的调查用于轴上的轴C面4H-SIC外延层
7. Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates [O] . Yazdanfar, Milan, Gueorguiev Ivanov, Ivan, Pedersen, Henrik, 2013

机译：减少在4°离轴衬底上生长的厚4H-SiC外延层中的结构缺陷

Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism

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Experimental analysis of current conduction through thermally grown SiO₂ on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism