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机译:脉冲直流磁控管和空心阴极等离子射流溅射系统中基板总功率密度的比较研究
Department of Low-temperature plasma Institute of Physics of the ASCR v.v.i. Na Slovance 2 Prague 8 182 21 Czech Republic;
Department of Low-temperature plasma Institute of Physics of the ASCR v.v.i. Na Slovance 2 Prague 8 182 21 Czech Republic;
Department of Low-temperature plasma Institute of Physics of the ASCR v.v.i. Na Slovance 2 Prague 8 182 21 Czech Republic;
Department of Low-temperature plasma Institute of Physics of the ASCR v.v.i. Na Slovance 2 Prague 8 182 21 Czech Republic;
calorimeter probe; floating substrate; magnetron; plasma jet; pulsed discharge;
机译:直流磁控溅射和大功率脉冲磁控溅射制备的薄膜的比较研究
机译:使用Penning放电和空心阴极放电的高功率脉冲溅射(HPPS)辉光等离子体技术的比较研究
机译:脉冲直流磁控溅射溅射中衬底附近等离子体密度的三步衰减
机译:大功率脉冲和调制脉冲功率磁控溅射中等离子体的时间分辨研究和比较
机译:用于互连金属化的高功率脉冲磁控溅射和调制脉冲功率溅射的比较。
机译:低温下大功率脉冲磁控溅射在铀上沉积的TiN膜
机译:直流磁控溅射与大功率脉冲磁控溅射制备CrNx薄膜的比较研究