Silicon Patterning Using Self-assembled PS-b-PAA Diblock Copolymer Masks for Black Silicon Fabrication via Plasma Etching

摘要

The poly(styrene-b-acrylic acid) diblock copolymer is utilized as a novel self-assembling mask material suitable for pattern transfer applications. This material system has high dry etch selectivity and can produce a variety of feature types and size scales. Different vertical profiles were produced by altering the etch recipes and diblock copolymer or SiO_2 mask processing. This patterning technique is used to fabricate antireflective silicon metamaterials that show broadband antireflection properties in the visible and infrared wavelength range. These materials are potentially useful for solar cell and light sensing applications.