Surface Patterning by Local Plasma Jet Sacrificial Oxidation of Silicon

摘要

Local plasma oxidation of silicon in combination with wet chemical etching provides a method for high accuracy computer controlled surface modification and machining. In this paper we use a microwave powered atmospheric pressure Ar/He/O_2 plasma jet for the local oxidation with a typical tool function width of about 1.4 mm. The relationship between oxide layer thickness and plasma jet parameters is discussed in detail regarding working distance, scan velocity, and line feed rate. Sur face roughness after oxidation and after chemical removal of the oxide layer was measured using an atomic force micro scope. The compositional analysis and the refractive index n of the oxide layer were measured by secondary ion mass spectroscopy (SIMS) and spectroscopic ellipsometry, respectively.