Bias voltage effects on tunneling magnetoresistance in Fe/MgAl_2O_4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions

摘要

We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl_2O_4/Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green’s function method and the density functional theory, we calculate bias voltage dependencies of magnetoresistance (MR) ratios in both the MTJs. We find that in both the MTJs, the MR ratio decreases as the bias voltage increases and finally vanishes at a critical bias voltage Vc. We also find that the critical bias voltage Vc of the MgAl_2O_4-based MTJ is clearly larger than that of the MgO-based MTJ. Since the in-plane lattice constant of the Fe/MgAl_2O_4/Fe(001) supercell is twice that of the Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl_2O_4-based MTJs have an identical band structure to that obtained by folding the Fe band structure of the MgO-based MTJs in the Brillouin zone of the in-plane wave vector. We show that such a difference in the Fe band structure is the origin of the difference in the critical bias voltage Vc between the MgAl_2O_4- and MgO-based MTJs.