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Influence of interface layer insertion on the spin Seebeck effect and the spin Hall magnetoresistance of Y_3Fe_5O_(12)/Pt bilayer systems

机译:界面层插入对旋扎效应的影响和Y_3FE_5O_(12)/ PT双层系统的旋转霍尔磁阻

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摘要

We observe significantly enhanced spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) values by inserting 0.3-0.6-nm-thick layers of magnetic materials with different composition (Cr, Ni_(80)Fe_(20), Co_(90)Fe_(10), Fe_(50)Co_(50), and Fe) at the Y_3Fe_5O_(12)/Pt interface. To study the actual magnetic state of these insertion layers, we. then, investigated the magnetization of these layers via generalized magneto-optical ellipsometry. Magnetic insertion layers in this thickness range did not exhibit a measurable magnetization, even though our method should have detected even a small fraction of the bulk magnetization value for the utilized materials easily. Therefore, the observed SSE and SMR enhancement generated by the insertion of thin magnetic material layers did not result from a net interface magnetization but might, instead, be related to the paramagnetic stale of the inserted layers.
机译:通过用不同的组合物插入0.3-0.6-nm厚的磁性材料(Cr,Ni_(80)Fe_(20),CO_(90),通过插入0.3-0.6-nm厚的磁性材料(CR,Ni_(20),CO_(90)来观察显着增强的旋击效果(SSE)和旋转霍米磁阻(SMR)值FE_(10),FE_(50)CO_(50)和FE)在Y_3FE_5O_(12)/ PT接口处。为了研究这些插入层的实际磁力,我们。然后,通过广义磁光椭圆形测定这些层的磁化。磁插入层在该厚度范围内没有表现出可测量的磁化,即使我们的方法甚至容易地检测到利用材料的小数块磁化值。因此,通过插入薄磁性材料层产生的观察到的SSE和SMR增强没有由净接口磁化产生而导致,而是可以与插入层的顺磁陈降有关。

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  • 来源
    《Physical review.B.Condensed matter and materials physics》 |2020年第9期|094411.1-094411.11|共11页
  • 作者单位

    Faculty of Information Science and Electrical Engineering Kyushu University Fukuoka 819-0395 Japan;

    Faculty of Information Science and Electrical Engineering Kyushu University Fukuoka 819-0395 Japan;

    Faculty of Information Science and Electrical Engineering Kyushu University Fukuoka 819-0395 Japan;

    Faculty of Information Science and Electrical Engineering Kyushu University Fukuoka 819-0395 Japan;

    Faculty of Information Science and Electrical Engineering Kyushu University Fukuoka 819-0395 Japan;

    CIC nanoGUNE BRTA E-20018 Donostia-San Sebastian Spain;

    CIC nanoGUNE BRTA E-20018 Donostia-San Sebastian Spain;

    Faculty of Information Science and Electrical Engineering Kyushu University Fukuoka 819-0395 Japan;

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