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SPIN HALL EFFECT DEVICE WITH SPIN ABSORPTION LAYER
SPIN HALL EFFECT DEVICE WITH SPIN ABSORPTION LAYER
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机译:具有自旋吸收层的自旋霍尔效应器件
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摘要
Techniques are disclosed for forming magnetic random access memory (MRAM) devices and logic devices that includes a layer of material to induce a spin Hall effect (SHE) that is in contact with a layer of a spin absorption material. Disposing a spin absorption material layer in contact with a SHE material improves switching efficiency of devices that include this interface.
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