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Temperature and magnetic field dependent Raman study of electron-phonon interactions in thin films of Bi_2Se_3 and Bi_2Se_3 nanoflakes

机译:在Bi_2Se_3和Bi_2se_3纳米薄膜薄膜中的电子 - 声子相互作用的温度和磁场依赖拉曼研究

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摘要

We have investigated two-dimensional nanostructures of the topological insulators Bi_2Se_3 and Bi_2Se_3 by means of temperature and magnetic field dependent Raman spectroscopy. The surface contribution of our samples was increased by using thin films of dropcasted nanoflakes with the aim of enhancing their topological properties. Raman spectroscopy provides a contact-free method to investigate the behavior of topological properties with temperature and magnetic fields at lower dimensions. The temperature dependent Raman study reveals anharmonic phonon behavior for Bi_2Se_3 indicative of a two-phonon relaxation mechanism in this material. Contrary to this, Bi_2Se_3 shows clear deviations from a two-phonon anharmonic decay model at temperatures below 120 K exhibiting a hardening and broadening, especially of the A_(1g)~2 mode. Similarly, the magnetic field dependent self-energy effects are only observed for the A_(1g)~2 mode of Bi_2Se_3, showing a broadening and hardening with increasing field. We interpret our results in terms of corrections to the phonon self-energy for Bi_2Se_3 at temperatures below 120 K and magnetic fields above 4 T due to electron-hole pair excitations associated with the conducting surface states. The phonon renormalization with increasing magnetic field is explained by a gap opening in the Dirac cone that enables phonon coupling to the changing electric susceptibility.
机译:我们通过温度和磁场依赖性拉曼光谱研究了拓扑绝缘体Bi_2Se_3和Bi_2Se_3的二维纳米结构。通过使用碎片纳米薄膜的薄膜增加了我们样品的表面贡献,目的是提高其拓扑性质。拉曼光谱提供无接触方法,以研究拓扑性质的拓扑和磁场在较低尺寸下的行为。温度依赖性拉曼研究显示了在该材料中指示双声子弛豫机制的BI_2SE_3的anharmonic声子行为。与此相反,Bi_2se_3显示了在低于120k的温度下的两个声子anharmonic衰变模型的明显偏差,其呈现硬化和展现,尤其是A_(1G)〜2模式。类似地,仅针对Bi_2Se_3的A_(1G)〜2模式观察到磁场相关的自能效应,显示随着较大场的展大和硬化。我们在低于120k和4 T的温度下的校正对Bi_2Se_3的校正的结果,由于与导电表面状态相关联的电子空穴对激发,在4 T的温度下的温度下。利用增加磁场的音源重整化由狄拉科锥中的间隙开口解释,使得声子耦合到变化的电敏感性。

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  • 来源
    《Physical review》 |2020年第24期|245431.1-245431.8|共8页
  • 作者单位

    CFEL University Hamburg Lurnper Chaussee 175 22761 Hamburg Germany;

    CFEL University Hamburg Lurnper Chaussee 175 22761 Hamburg Germany;

    Department of Physics and Materials Research Laboratory University of Illinois Urbana Illinois 61801 USA;

    Department of Physics and Materials Research Laboratory University of Illinois Urbana Illinois 61801 USA;

    CFEL University Hamburg Lurnper Chaussee 175 22761 Hamburg Germany;

    Singapore Synchrotron Light Source National University of Singapore Singapore 117603 Singapore;

    Institute for Materials Science Kiel University Kaiserstrasse 2 24143 Kiel Germany;

    CFEL University Hamburg Lurnper Chaussee 175 22761 Hamburg Germany;

    Institute for Materials Science Kiel University Kaiserstrasse 2 24143 Kiel Germany;

    Singapore Synchrotron Light Source National University of Singapore Singapore 117603 Singapore;

    School of Physics The University of New South Wales New South Wales 2052 Sydney Australia;

    Department of Physics and Materials Research Laboratory University of Illinois Urbana Illinois 61801 USA;

    CFEL University Hamburg Lurnper Chaussee 175 22761 Hamburg Germany;

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