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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Floquet topological semimetal with a helical nodal line in 2+1 dimensions
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Floquet topological semimetal with a helical nodal line in 2+1 dimensions

机译:Floquet拓扑半决面,螺旋Nodal线2 + 1尺寸

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Topological semimetals with a nodal line is a class of topological matter extending the concept of topological matter beyond topological insulators and Weyl/Dirac semimetals. Here we show theoretically that a Floquet topological semimetal with a helical nodal line can be generated in 2+1 dimensions by irradiating graphene or the surface of a topological insulator with circularly polarized light. The helical nodal line is the nodal line running across the Brillouin zone with helical winding. Specifically, it is shown that the dynamics of irradiated graphene is described by the time Stark Hamiltonian, which can host a Floquet topological insulator and a weakly driven Floquet topological semimetal with a helical nodal line in the high and low frequency limits, respectively. One of the most striking features of the Floquet topological semimetal at low frequency is that the Berry phase accumulated along the time direction, also known as the Zak phase, has a topological discontinuity of pi across the projected helical nodal line. It is predicted that such a topological discontinuity of the Berry phase manifests itself as the topological discontinuity of the Floquet states. At intermediate frequency, this topological discontinuity can create an interesting change of patterns in the quasienergy dispersion of the Floquet states.
机译:拓扑半球与节点线是一类拓扑物质,拓展拓扑绝缘体和Weyl / Dirac半型概念。在这里,我们通过用圆偏振光照射石墨烯或拓扑绝缘体的表面,理论上,理论上,通过用螺旋卵形线的浮子拓扑半型半尺寸可以在2 + 1尺寸中产生。螺旋髓系是螺旋绕组穿过布里渊区的节点线。具体地,示出了辐照石墨烯的动态由STARK Hamiltonian描述,其可以分别托管浮子拓扑绝缘体和弱从驱动的浮子拓扑半型,分别在高低频率限制中具有螺旋Nodal线。低频下浮子拓扑半决面的最引人注目的特征之一是沿着时间方向累积的浆果相,也称为Zak阶段,在突出的螺旋Nodal线上具有PI的拓扑不连续性。预测,浆果阶段的这种拓扑不连续性表现为浮子状态的拓扑不连续性。在中频处,这种拓扑不连续性可以在浮子状态的QuasieInergy分散中产生有趣的模式变化。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2019年第11期|115136.1-115136.12|共12页
  • 作者单位

    Korea Inst Adv Study Sch Phys Seoul 02455 South Korea;

    Korea Inst Adv Study Quanturn Universe Ctr Seoul 02455 South Korea;

    Korea Inst Adv Study Sch Phys Seoul 02455 South Korea|Korea Inst Adv Study Quanturn Universe Ctr Seoul 02455 South Korea;

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