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Field-dependent nonlinear surface resistance and its optimization by surface nanostructuring in superconductors

机译:场相关的非线性表面电阻及其在超导体中的表面纳米结构优化

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摘要

We propose a theory of nonlinear surface resistance of a dirty superconductor in a strong radio-frequency (rf) field, taking into account magnetic and nonmagnetic impurities, finite quasiparticle lifetimes, and a thin proximity-coupled normal layer characteristic of the oxide surface of many materials. The Usadel equations were solved to obtain the quasiparticle density of states (DOS) and the low-frequency surface resistance R-s as functions of the rf field amplitude H-0. It is shown that the interplay of the broadening of the DOS peaks and a decrease of a quasiparticle gap caused by the rf currents produces a minimum in R-s(H-0) and an extended rise of the quality factor Q(H-0) with the rf field. Paramagnetic impurities shift the minimum in R-s(H-0) to lower fields and can reduce R-s(H-0) in a wide range of H-0. Subgap states in the DOS can give rise to a residual surface resistance while reducing R-s at higher temperatures. A proximity-coupled normal layer at the surface can shift the minimum in R-s(H-0) to either low and high fields and can reduce R-s below that of an ideal surface. The theory shows that the behavior of R-s(H-0) changes as the temperature and the rf frequency are increased, and the field dependence of Q(H-0) can be very sensitive to the materials processing. Our results suggest that the nonlinear rf losses can be minimized by tuning pair-breaking effects at the surface using impurity management or surface nanostructuring.
机译:考虑到磁性和非磁性杂质,有限的准粒子寿命以及许多氧化物表面的薄薄的邻近耦合法向特性,我们提出了在强射频(rf)场中肮脏的超导体的非线性表面电阻的理论。材料。求解Usadel方程,以获得准粒子密度(DOS)和低频表面电阻R-s作为rf场振幅H-0的函数。结果表明,由射频电流引起的DOS峰加宽和准粒子间隙的减小相互影响,使Rs(H-0)最小,而品质因数Q(H-0)随射频字段。顺磁性杂质将R-s(H-0)的最小值移至较低的磁场,并可以在较宽的H-0范围内降低R-s(H-0)。 DOS中的亚能隙状态会增加表面残余电阻,同时降低高温下的R-s。表面处的邻近耦合法向层可以将R-s(H-0)中的最小值移动到低场和高场,并且可以将R-s减小到理想表面的下方。理论表明,R-s(H-0)的行为随温度和射频频率的增加而变化,并且Q(H-0)的场依存性对材料的加工非常敏感。我们的结果表明,通过使用杂质管理或表面纳米结构调整表面的成对断裂效应,可以使非线性rf损失最小化。

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  • 来源
    《Physical review》 |2019年第6期|64522.1-64522.19|共19页
  • 作者

    Kubo Takayuki; Gurevich Alex;

  • 作者单位

    KEK High Energy Accelerator Res Org Tsukuba Ibaraki 3050801 Japan|SOKENDAI Hayama Kanagawa 2400115 Japan|Old Dominion Univ Dept Phys Norfolk VA 23529 USA|Old Dominion Univ Ctr Accelerator Sci Norfolk VA 23529 USA;

    Old Dominion Univ Dept Phys Norfolk VA 23529 USA|Old Dominion Univ Ctr Accelerator Sci Norfolk VA 23529 USA;

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