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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Anatomy of electrical signals and dc-voltage line shape in spin-torque ferromagnetic resonance
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Anatomy of electrical signals and dc-voltage line shape in spin-torque ferromagnetic resonance

机译:自旋转矩铁磁共振中的电信号解剖和直流电压线形

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摘要

The electrical detection of spin-torque ferromagnetic resonance (st-FMR) is becoming a popular method for measuring the spin-Hall angle of heavy metals (HM). However, various sensible analysis on the same material with either the same or different experimental setups yielded different spin-Hall angles with large discrepancy, indicating some missing ingredients in our current understanding of st-FMR. Here we carry out a careful analysis of electrical signals of the st-FMR in a HM/ferromagnet (HM/FM) bilayer with an arbitrary magnetic anisotropy. The FM magnetization is driven by two radio-frequency (rf) forces: the rf Oersted field generated by an applied rf electric current and the so called rf spin-orbit torque from the spin current flowing perpendicularly from the HM to the FM due to the spin-Hall effect. By using the universal form of the dynamic susceptibility matrix of magnetic materials at the st-FMR, the electrical signals, originated from the anisotropic magnetoresistance, anomalous Hall effect, and inverse spin-Hall effect are analyzed and dc-voltage line shapes near the st-FMR are obtained. Angular dependence of dc voltage is given for two setups. A way of experimentally extracting the spin-Hall angle of a HM is proposed.
机译:自旋扭矩铁磁共振(st-FMR)的电检测正在成为测量重金属(H)的自旋霍尔角的一种流行方法。然而,对相同材料进行相同或不同实验设置的各种明智分析得出的自旋霍耳角存在较大差异,这表明我们目前对st-FMR的理解缺少一些成分。在这里,我们对具有任意磁各向异性的HM /铁磁体(HM / FM)双层中的st-FMR的电信号进行仔细分析。 FM磁化​​强度由两个射频(rf)力驱动:由施加的rf电流产生的rf Oersted场,以及由于自旋电流从HM垂直流向FM的自旋电流而产生的所谓rf自旋轨道转矩。自旋霍尔效应。通过使用磁性材料在st-FMR处的动态磁化率矩阵的通用形式,分析来自各向异性磁阻,异常霍尔效应和自旋霍尔效应的电信号,并分析st附近的直流电压线形-FMR已获得。两种设置都给出了直流电压的角度依赖性。提出了一种实验提取HM自旋霍尔角的方法。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2019年第6期|064424.1-064424.11|共11页
  • 作者单位

    Hong Kong Univ Sci & Technol, Phys Dept, Kowloon, Clear Water Bay, Hong Kong, Peoples R China|HKUST Shenzhen Res Inst, Shenzhen 518057, Peoples R China;

    Nanjing Univ, Natl Lab Solid State Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China|Nanjing Univ, Dept Phys, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China;

    Nanjing Univ, Natl Lab Solid State Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China|Nanjing Univ, Dept Phys, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China;

    Nanjing Univ, Natl Lab Solid State Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China|Nanjing Univ, Dept Phys, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China;

    Hong Kong Univ Sci & Technol, Phys Dept, Kowloon, Clear Water Bay, Hong Kong, Peoples R China|HKUST Shenzhen Res Inst, Shenzhen 518057, Peoples R China;

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