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Ground-state phase diagram of the one-dimensional half-filled extended Hubbard model

机译:一维半填充扩展Hubbard模型的基态相图

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摘要

We revisit the ground-state phase diagram of the one-dimensional half-filled extended Hubbard model with on-site (U) and nearest-neighbor (V) repulsive interactions. In the first half of the paper, using the weak-coupling renormalization-group approach (g-ology) including second-order corrections to the coupling constants, we show that bond-charge-density-wave (BCDW) phase exists for U≈2V in between charge-density-wave (CDW) and spin-density-wave (SDW) phases. We find that the umklapp scattering of parallel-spin electrons disfavors the BCDW state and leads to a bicritical point where the CDW-BCDW and SDW-BCDW. continuous-transition lines merge into the CDW-SDW first-order transition line. In the second half of the paper, we investigate the phase diagram of the extended Hubbard model with either additional staggered site potential Δ or bond alternation δ. Although the alternating site potential Δ strongly favors the CDW state (that is, a band insulator), the BCDW state is not destroyed completely and occupies a finite region in the phase diagram. Our result is a natural generalization of the work by Fabrizio, Gogolin, and Nersesyan [Phys. Rev. Lett. 83, 2014 (1999)], who predicted the existence of a spontaneously dimerized insulating state between a band insulator and a Mott insulator in the phase diagram of the ionic Hubbard model. The bond alternation δ destroys the SDW state and changes it into the BCDW state (or Peierls insulating state). As a result the phase diagram of the model with δ contains only a single critical line separating the Peierls insulator phase and the CDW phase. The addition of Δ or δ changes the universality class of the CDW-BCDW transition from the Gaussian transition into the Ising transition.
机译:我们重新研究一维半填充扩展Hubbard模型的基态相图,该模型具有现场(U)和最近邻(V)排斥相互作用。在本文的上半部分,使用包括对耦合常数进行二阶校正的弱耦合重归一化组方法(g-ology),我们证明了U≈存在键电荷密度波(BCDW)相。电荷密度波(CDW)和自旋密​​度波(SDW)相位之间为2V。我们发现平行自旋电子的umklapp散射不利于BCDW状态,并导致CDW-BCDW和SDW-BCDW出现双临界点。连续过渡线合并为CDW-SDW一阶过渡线。在本文的后半部分,我们将研究具有附加交错位点电位Δ或键交替δ的扩展Hubbard模型的相图。尽管交变位点电势Δ强烈支持CDW状态(即带绝缘子),但BCDW状态并未完全破坏,并且在相图中占据了有限的区域。我们的结果是Fabrizio,Gogolin和Nersesyan [Phys。牧师83,2014(1999)],他在离子Hubbard模型的相图中预测了带状绝缘子和Mott绝缘子之间自发二聚化绝缘状态的存在。键交替δ破坏SDW状态并将其更改为BCDW状态(或Peierls绝缘状态)。结果,具有δ的模型的相图仅包含一条将Peierls绝缘子相和CDW相分开的临界线。 Δ或δ的相加会更改CDW-BCDW过渡的通用性类别,从高斯过渡到Ising过渡。

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