Acoustic-phonon propagation in rectangular semiconductor nanowires with elastically dissimilar barriers

摘要

We have theoretically studied acoustic phonon spectra and phonon propagation in rectangular nanowires embedded within elastically dissimilar materials. As example systems, we have considered GaN nanowires with A1N and plastic barrier layers. It has been established that the acoustically mismatched barriers dramatically influence the quantized phonon spectrum of the nanowires. The barriers with lower sound velocity compress the phonon energy spectrum and reduce the phonon group velocities in the nanowire. The barriers with higher sound velocity have an opposite effect. The physical origin of this effect is related to redistribution of the elastic deformations in the acoustically mismatched nanowires. In the case of the "acoustically slow" barriers, the elastic deformation waves are squeezed in the barrier layer. The effect predicted for the nanowires embedded with elastically dissimilar materials could be used for reengineering phonon spectrum in nanostructures.