Influence of the spatial, temporal, and concentrational dependence of the diffusion coefficient on dopant dynamics: optimization of annealing time

摘要

It has recently been shown that the interface between layers of a heterostructure makes it possible to increase the sharpness of the p-n junction and the homogeneity of an impurity distribution in doped areas, and also to control the depth of the junction. In this work the dynamics of a dopant concentration in an inhomogeneous semiconductor structure has been analyzed, taking into account the temporal and concentrational dependence of the diffusion coefficient. The optimization of the parameters and the annealing time for production of the p-n junction with smaller parasitic capacitance has been done. It has been shown that doubling the annealing time in comparison with its optimal value leads to variation of the sharpness of the p-n junction from 10% to 200%.