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Dependence of magnetic penetration depth on the thickness of superconducting Nb thin films

机译:磁渗透深度与超导Nb薄膜厚度的关系

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摘要

In this paper we present the results of a systematic study on the magnetic field penetration depth of superconducting niobium thin films. The films of thicknesses ranging from 8 to 300 nm were deposited on a Si substrate by dc magnetron sputtering. The values of the penetration depth λ(0) were obtained from the measurements of the effective microwave surface impedance by employing a sapphire resonator technique. Additionally, for the films of thickness smaller than 20 nm, the absolute values of λ(0) were determined by a microwave transmission method. We found that the reduction of the film thickness below 50 nm leads to a significant increase of the magnetic field penetration depth from about 80 nm for 300 nm thick film up to 230 nm for a 8 nm thick film. The dependence of the penetration depth on film thickness is described well by taking into account the experimental dependences of the critical temperature and residual resistivity on the thickness of the niobium films. Structural disordering of the films and suppression of superconductivity due to the proximity effect are considered as mechanisms responsible for the increase of the penetration depth in ultrathin films.
机译:在本文中,我们提出了系统研究超导铌薄膜的磁场穿透深度的结果。通过直流磁控溅射在硅衬底上沉积厚度为8至300 nm的薄膜。穿透深度λ(0)的值是通过使用蓝宝石谐振器技术从有效微波表面阻抗的测量获得的。另外,对于厚度小于20nm的膜,通过微波透射法确定λ(0)的绝对值。我们发现,将膜厚度减小到50 nm以下会导致磁场穿透深度显着增加,从300 nm厚膜的约80 nm到8 nm厚膜的230 nm。通过考虑临界温度和残余电阻率对铌膜厚度的实验依赖性,很好地描述了渗透深度对膜厚度的依赖性。膜的结构紊乱和由于邻近效应引起的超导抑制被认为是导致超薄膜渗透深度增加的机制。

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