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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Experimental evidence of the dominant role of low-angle grain boundaries for the critical current density in epitaxially grown YBa_2Cu_3O_(7-δ) thin films
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Experimental evidence of the dominant role of low-angle grain boundaries for the critical current density in epitaxially grown YBa_2Cu_3O_(7-δ) thin films

机译:低角度晶界对外延生长的YBa_2Cu_3O_(7-δ)薄膜中的临界电流密度的主导作用的实验证据

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摘要

Thin films of the high-temperature superconductor YBa_2Cu_3O_(7-δ) (YBCO) show an increase of the critical current density if grown on nanostructured SrTiO_3 (STO) substrate. The temperature dependence of the critical current density of such a film was measured and compared to j_c(T) grown on regular [100] STO. The magneto-optical imaging technique was used to measure the flux-density distribution in the film and by applying an inversion scheme of the law of Biot and Savart the current density distribution in the film was calculated with a spatial resolution of 5 μm. By comparing the results with theoretical models for the temperature dependence of j_c in conventional HTSC thin films, a possible explanation for the increase of the critical current density due to the nanostructuring is presented. In addition, a complete scenario is obtained of the pinning mechanisms in YBCO thin films epitaxially grown on STO for the investigated temperature range of T=8-70 K from the results.
机译:如果在纳米结构的SrTiO_3(STO)衬底上生长,高温超导体YBa_2Cu_3O_(7-δ)(YBCO)的薄膜显示出临界电流密度的增加。测量了这种薄膜的临界电流密度的温度依赖性,并将其与在常规[100] STO上生长的j_c(T)进行比较。磁光成像技术用于测量薄膜中的磁通量密度分布,并通过应用Biot和Savart定律的反演方案,以5μm的空间分辨率计算薄膜中的电流密度分布。通过将结果与传统HTSC薄膜中j_c的温度依赖性的理论模型进行比较,提出了可能解释纳米结构引起的临界电流密度增加的情况。此外,从研究结果可以得出一个完整的场景,即在STO外延生长的YBCO薄膜中,对于研究的温度T = 8-70 K,其钉扎机制是完整的。

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