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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Critical currents of ex situ YBa_2Cu_3O_(7-δ) thin films on rolling assisted biaxially textured substrates: Thickness, field, and temperature dependencies
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Critical currents of ex situ YBa_2Cu_3O_(7-δ) thin films on rolling assisted biaxially textured substrates: Thickness, field, and temperature dependencies

机译:轧制辅助双轴织构衬底上的非原位YBa_2Cu_3O_(7-δ)薄膜的临界电流:厚度,场和温度依赖性

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摘要

The critical current density J_c flowing in thin YBa_2Cu_3O_(7-δ) (YBCO) films of various thicknesses d has been studied magnetometrically, both as a function of applied field H and temperature T, with a central objective to determine the dominant source of vortex pinning in these materials. The films, grown by a BaF_2 ex situ process and deposited on buffered rolling assisted biaxially textured substrates ("RABiTS") substrates of Ni-5% W, have thicknesses d ranging from 28 ran to 1.5 μm. Isothermal magnetization loops M(H;T) and remanent magnetization M_(rem)(T) in H=0 were measured with H‖c-axis (i.e., normal to film plane). The resulting J_c(d) values (obtained from a modified critical state model) increase with thickness d, peak near d ~ 120 nm, and thereafter decrease as the films get thicker. For a wide range of temperatures and intermediate fields, we find J_c∝H~(-α) with α ~(0.56-0.69) for all materials. This feature can be attributed to pinning by large random defects, which theoretically has power-law exponent α=5/8. Calculated values for the size and density of defects are comparable with those observed by TEM in the films. As a function of temperature, we find J_c(T,sf)~[1-(T/T_c)~2]~n with n ~ 1.2-1.4. This points to "δT_c pinning" (pinning that suppresses T_c locally) in these YBCO materials.
机译:研究了不同厚度d的YBa_2Cu_3O_(7-δ)(YBCO)薄膜中流动的临界电流密度J_c,它是施加磁场H和温度T的函数,其主要目的是确定涡旋的主要来源固定这些材料。通过BaF_2非原位工艺生长并沉积在Ni-5%W的缓冲滚动辅助双轴织构衬底(“ RABiTS”)衬底上的膜的厚度d在28nm至1.5μm的范围内。以H′c轴(即垂直于胶片平面)测量H = 0时的等温磁化回路M(H; T)和剩磁M_(rem)(T)。最终的J_c(d)值(从修正的临界状态模型获得)随厚度d的增加而增加,在d〜120 nm附近达到峰值,此后随着膜变厚而减小。对于各种温度和中间场,我们发现所有材料的J_c∝H〜(-α)的α〜(0.56-0.69)。该特征可归因于大的随机缺陷的钉扎,理论上,该缺陷具有幂律指数α= 5/8。缺陷的尺寸和密度的计算值与薄膜中通过TEM观察到的值相当。作为温度的函数,我们发现J_c(T,sf)〜[1-(T / T_c)〜2]〜n,n〜1.2-1.4。这指向这些YBCO材料中的“δT_c钉扎”(局部抑制T_c的钉扎)。

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