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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 μm
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Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 μm

机译:单个InAs量子点中以1.3μm发射的激子,三重子和带电双激子态的精细结构和磁光

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We present a detailed investigation into the optical characteristics of individual InAs quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low temperature emission in the telecoms window around 1300 nm. Using microphotoluminescence (PL) spectroscopy we have identified neutral, positively charged, and negatively charged exciton and biexciton states. Temperature-dependent measurements reveal dot-charging effects due to differences in carrier diffusivity. We observe a pronounced linearly polarized splitting of the neutral exciton and biexciton lines (~250 μeV) resulting from asymmetry in the QD structure. This asymmetry also causes a mixing of the excited trion states which is manifested in the fine structure and polarization of the charged biexciton emission; from this data we obtain values for the ratio between the anisotropic and isotropic electron-hole exchange energies of Δ_1/Δ_0 ≈ 0.2-0.5. Magneto-PL spectroscopy has been used to investigate the diamagnetic response and Zeeman splitting of the various exciton complexes. We find a significant variation in g factor between the exciton, the positive biexciton, and the negative biexciton; this is also attributed to anisotropy effects and the difference in lateral extent of the electron and hole wave functions.
机译:我们对由金属有机化学气相沉积法生长的单个InAs量子点(QD)的光学特性进行了详细的研究,并在1300 nm左右的电信窗口中进行了低温发射。使用微光致发光(PL)光谱,我们已经确定了中性,带正电和带负电的激子和双激子态。取决于温度的测量结果显示出由于载流子扩散率差异而产生的点电荷效应。我们观察到中性激子和双激子线(〜250μeV)的明显的线性极化分裂,这是由QD结构中的不对称性引起的。这种不对称还会引起激发的三态混合,这表现为带电双激子发射的精细结构和极化。从该数据中,我们获得各向异性和各向同性的电子-空穴交换能之间的比值Δ_1/Δ_0≈0.2-0.5。磁-PL光谱已用于研究各种激子复合物的反磁响应和塞曼分裂。我们发现激子,正双激子和负双激子之间的g因子存在显着差异;这也归因于各向异性效应以及电子和空穴波函数横向范围的差异。

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