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Disorder-enhanced spin polarization in diluted magnetic semiconductors

机译:稀磁半导体中无序增强的自旋极化

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We present a theoretical study of diluted magnetic semiconductors that includes spin-orbit coupling within a realistic host band structure and treats explicitly the effects of disorder due to randomly substituted Mn ions. While spin-orbit coupling reduces the spin polarization by mixing different spin states in the valence bands, we find that disorder from Mn ions enhances the spin polarization due to formation of ferromagnetic impurity clusters and impurity bound states. The disorder leads to large effects on the hole carriers which form impurity bands as well as hybridizing with the valence band. For Mn doping 0.01 approx< x approx<0.04, the system is metallic with a large effective mass and low mobility.
机译:我们提出了一种对稀磁半导体进行理论研究的方法,该理论包括在现实的主带结构内包括自旋轨道耦合,并明确治疗由于随机取代的Mn离子引起的无序效应。尽管自旋轨道耦合通过在价带中混合不同的自旋态来降低自旋极化,但我们发现由于铁磁杂质簇和杂质结合态的形成,Mn离子的无序增强了自旋极化。该无序导致对形成杂质带以及与价带杂化的空穴载流子的巨大影响。对于Mn掺杂0.01约

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