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Mott and band-insulator transitions in the binary-alloy Hubbard model: Exact diagonalization and determinant quantum Monte Carlo simulations

机译:二元哈伯德模型中的Mott和带绝缘子跃迁:精确的对角化和行列式量子蒙特卡洛模拟

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摘要

We use determinant quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the compressibility and conductivity, we show that gapped, incompressible Mott insulating phases exist away from half-filling when the variance of the local site energies is sufficiently large. The compressible regions around this Mott phase are metallic only if the density of sites with the corresponding energy exceeds the percolation threshold, but are Anderson insulators otherwise.
机译:我们使用行列式量子蒙特卡罗模拟和精确对角线化来探索在Hubbard模型中具有随机分布的局部位能的双峰分布的绝缘行为。从可压缩性和电导率的温度依赖性,我们表明,当局部位能的变化足够大时,存在缺口的,不可压缩的Mott绝缘相远离半填充。仅当具有相应能量的位点密度超过渗流阈值时,此Mott相周围的可压缩区域才是金属,否则为Anderson绝缘体。

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