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首页> 外文期刊>Physical review >Electronic Structure Of Superconducting Copper Intercalated Transition Metal Dichalcogenides:rnfirst-principles Calculations
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Electronic Structure Of Superconducting Copper Intercalated Transition Metal Dichalcogenides:rnfirst-principles Calculations

机译:超导铜嵌入过渡金属二硫属化物的电子结构:第一性原理计算

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We report first-principles calculations, within density functional theory, of copper intercalated titanium diselenides, Cu_xTiSe_2, for values of x ranging from 0 to 0.11. The effect of intercalation on the energy bands and density of states of the host material is studied in order to better understand the cause of the superconductivity that was recently observed in these structures. We find that charge transfer from the copper atoms to the metal dichalcogenide host layers leads to the formation of Cu-Se bonds that stabilize most of the transferred charge on Se atoms and lead to a relatively large lowering of the Se-derived hole bands. The suppression of the hole bands, the increase in the number of electrons, and the corresponding enhancement of the density of states at the Fermi energy may contribute to the emergence of superconductivity in these systems.
机译:在密度泛函理论内,我们报告了第一性原理计算的x值介于0到0.11之间的铜嵌入的钛二硒化物Cu_xTiSe_2。为了更好地了解最近在这些结构中观察到的超导原因,研究了插层对主体材料的能带和状态密度的影响。我们发现,电荷从铜原子转移到金属二硫化氢主体层导致形成Cu-Se键,该键稳定了大部分转移到Se原子上的电荷,并导致Se衍生的空穴能带相对较大的降低。空穴带的抑制,电子数量的增加以及在费米能量处的态密度的相应增强可能有助于这些系统中超导的出现。

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