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Electronic structure of Au-induced surface phases on Si(110): LEED and angle-resolved photoemission measurements

机译:Si(110)上金诱导的表面相的电子结构:LEED和角度分辨光发射测量

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摘要

Au-induced reconstructions of the Si(110) surface have been studied using low-energy electron diffraction and angle-resolved photoemission (ARP). Low-energy electron diffraction reveals three well-ordered phases: 1 × 2, 2 × 5, and (4,0) × (1,3), depending on the Au coverage in accordance with previous studies. The highest coverage phase is observed to be mixed with a (4,0) × (3,3) phase. ARP spectra show no clear surface-state bands on the 1 × 2 surface within the bulk band gap. The 2 × 5 surface composed of one-dimensional (1D) atomic chain exhibits two dispersive metallic bands with exact quarter and half fillings. Their Fermi surfaces are straight lines within the experimental accuracy indicating strong 1D characters. This phase is thus one of the most ideal 1D metallic systems ever fabricated on solid surfaces. The (4,0) × (1,3) surface has only one strongly dispersing but semiconducting band following the ×2 periodicity apparently.
机译:使用低能电子衍射和角度分辨光发射(ARP)研究了Au诱导的Si(110)表面重建。低能电子衍射显示出三个有序相:1×2、2×5和(4,0)×(1,3),这取决于先前研究的Au覆盖率。观察到最高覆盖相与(4,0)×(3,3)相混合。 ARP光谱显示在体带隙内的1×2表面上没有清晰的表面状态带。由一维(1D)原子链组成的2×5表面显示两个分散的金属带,具有精确的四分之一和半填充。它们的费米表面是在实验精度范围内的直线,表示强一维字符。因此,该相是有史以来在固体表面上制造的最理想的一维金属系统之一。 (4,0)×(1,3)表面显然只有一个强分散的但半导体带,其遵循×2周期性。

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