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Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy

机译:高分辨率角分辨光发射光谱显示ReSe2的电子能带结构和范德华耦合

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摘要

ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium ‘chains’. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to behave as electronically and vibrational decoupled layers. Here, we probe for the first time the electronic band structure of bulk ReSe2 by direct nanoscale angle-resolved photoemission spectroscopy. We find a highly anisotropic in- and out-of-plane electronic structure, with the valence band maxima located away from any particular high-symmetry direction. The effective mass doubles its value perpendicular to the Re chains and the interlayer van der Waals coupling generates significant electronic dispersion normal to the layers. Our density functional theory calculations, including spin-orbit effects, are in excellent agreement with these experimental findings.
机译:由于其低对称性,ReSe2和ReS2是层状过渡金属二硫属化合物中的不寻常化合物,由于平面内的‘“链”而具有独特的平面内各向异性。它们保持反演对称性,而与层数无关,并且与更著名的过渡金属二卤化物相反,已提出块体和很少单层的Re-TMD化合物表现为电子和振动解耦层。在这里,我们首次通过直接纳米尺度角分辨光发射光谱法研究了本体SeSe2的电子能带结构。我们发现一种高度各向异性的面内和面外电子结构,其价带最大值位于远离任何特定的高对称方向的位置。有效质量使垂直于Re链的质量增加一倍,并且层间范德华耦合产生垂直于各层的显着电子色散。我们的密度泛函理论计算,包括自旋轨道效应,与这些实验结果非常吻合。

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