Thermal response of epitaxial thin Bi films on Si(001) upon femtosecond laser excitation studied by ultrafast electron diffraction

A. Hanisch; B. Krenzer; T. Pelka; S. Moellenbeck; M. Horn-von Hoegen

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Thermal response of epitaxial thin Bi films on Si(001) upon femtosecond laser excitation studied by ultrafast electron diffraction

机译：飞秒激光激发下超快电子衍射研究Si（001）上外延Bi薄膜的热响应

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The thermal response of epitaxial Bi films deposited on Si(001) upon femtosecond laser pulse excitation is investigated by means of ultrafast electron diffraction. The initial surface temperature increase is caused by linear absorption of 800 nm photons.

机译：利用超快电子衍射研究了飞秒激光脉冲激发后沉积在Si（001）上的外延Bi膜的热响应。初始表面温度升高是由800 nm光子的线性吸收引起的。

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《Physical review》 |2008年第12期|937-942|共6页
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A. Hanisch; B. Krenzer; T. Pelka; S. Moellenbeck; M. Horn-von Hoegen;
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heat conduction; solid surfaces and solid-solid interfaces: structure and energetics;

机译：导热固体表面和固体-固体界面：结构和能量学;

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Thermal response of epitaxial thin Bi films on Si(001) upon femtosecond laser excitation studied by ultrafast electron diffraction

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