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Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction

机译:超快MeV电子衍射研究激光激发的薄膜金-绝缘体异质结构中的电子晶格能量弛豫

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摘要

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.
机译:我们应用时间分辨的MeV电子衍射研究薄膜Au-绝缘体异质结构中电子-晶格能量的弛豫。通过对瞬态Debye-Waller因子的精确测量,可以直接确定均方原子位移,从而可以定量地跟踪短脉冲激光激发后晶格温度的时间变化。在减小的激光注量范围内获得的数据表明,当减小膜厚度或用另外的绝缘体顶层覆盖Au膜时,弛豫率会提高。该行为归因于Au膜中的激发电子与相邻绝缘体层中的声子的跨界面耦合。使用两个温度模型对数据进行分析,明确考虑了界面处的附加能量损失,可以推断出两个松弛通道的相对强度。

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