Quantum dot defined in a two-dimensional electron gas at a n-AlGaAs/GaAs heterojunction: Simulation of electrostatic potential and charging properties

摘要

We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a quantitative description o