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Electronic, vibrational, and thermodynamic properties of metacinnabar β-HgS, HgSe, and HgTe

机译:辰砂β-HgS,HgSe和HgTe的电子,振动和热力学性质

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We report ab initio calculations of the electronic band structure and the phonon dispersion relations of the zincblende-type mercury chalcogenides (β-HgS, HgSe, and HgTe). The latter have been used to evaluate the temperature dependence of the specific heat, which has been compared with experimental data. The electronic band structure of these materials has been confirmed to have an inverted direct gap of the α-tin type, which makes HgSe and HgTe semimetallic. For β-HgS, however, our calculations predict a negative spin-orbit splitting that restores semiconducting properties to the material in spite of the inverted gap. We have calculated the spin-orbit induced linear terms in k, which appear at the Γ_8 valence bands. We have also investigated the pressure dependence of the crystal structure and the phonons.
机译:我们报告了从头算计算的锌带闪锌型汞硫族化物(β-HgS,HgSe和HgTe)的电子能带结构和声子色散关系。后者已用于评估比热的温度依赖性,已将其与实验数据进行了比较。已经证实这些材料的电子带结构具有α-锡型的反向直接间隙,这使得HgSe和HgTe成为半金属。然而,对于β-HgS,我们的计算预测负自旋轨道分裂,尽管存在反向间隙,但仍可恢复材料的半导体特性。我们已经计算出自旋轨道诱导的线性项(以k为单位),出现在Γ_8价带上。我们还研究了晶体结构和声子的压力依赖性。

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  • 来源
    《Physical review》 |2009年第19期|195204.1-195204.14|共14页
  • 作者单位

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

    MALTA Consolider Team, Departamento de Fisica Fundamental II, and Instituto de Materiales y Nanotecnologia, Universidad de. La Laguna, La Laguna 38205, Tenerife, Spain;

    CINVESTAV, Departamento de Materiales, Unidad Queretaro, Queretaro, 76230, Mexico;

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