机译:HfO_2的晶体结构对模型HfO_2 / Si / HfO_2绝缘体上硅场效应晶体管的输运性能的影响:DFT散射理论组合
Department of Chemical System Engineering, Graduate School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan and Department of Chemistry and CNR-ISTM, Universita di Perugia, via Elce di Sotto, 8, 1-06123 Perugia, Italy;
Wernher von Braun Center for Advanced Research, Av. Alice CPN Mattosinho 301, Campinas, SP 13098-392, Brazil;
Nano and Giga Solutions, Gilbert, Arizona 85296, USA;
Department of Chemical System Engineering, Graduate School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan;
electronic transport in interface structures; electron states at surfaces and interfaces; electron density of states and band structure of crystalline solids;
机译:远程等离子体技术形成Hfo_2 / SiO_2 / Si和Hfo_2 / SiO_xN_y / Si叠层结构的金属氧化物半导体场效应晶体管的特性
机译:氮掺入对多晶硅/ TiN / HfO_2 / SiO_2栅叠层金属氧化物半导体场效应晶体管的低频噪声的影响
机译:HfO_2金属-绝缘体-半导体结构中氧氮化物缓冲层改善金属-绝缘体-半导体场效应晶体管性能的研究
机译:在SiO_2 / Si衬底上制造的HfO_2和HfO_2 / TiO_2 / HfO_2 MIM电容器以及在蓝宝石上制造的HfO_2 MIM电容器的电性能
机译:先进工程材料和绝缘体上硅场效应晶体管的热传输。
机译:金属酞菁的氟化:单晶生长高效的N沟道有机场效应晶体管以及结构-性能关系
机译:内操作硬X射线光电子能谱研究在电阻开关$ Ti / HfO_2 / TiN $电池中电流顺应性和开关周期对氧和碳缺陷的影响