首页> 外文期刊>Physical review >Thermopower across the stripe critical point of La_(1.6-x)Nd_(0.4)Sr_xCuO_4: Evidence for a quantum critical point in a hole-doped high-T_c superconductor
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Thermopower across the stripe critical point of La_(1.6-x)Nd_(0.4)Sr_xCuO_4: Evidence for a quantum critical point in a hole-doped high-T_c superconductor

机译:La_(1.6-x)Nd_(0.4)Sr_xCuO_4的条形临界点上的热功率:掺杂空穴的高T_c超导体中量子临界点的证据

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摘要

The thermopower S of the high-T_c superconductor La_(1.6-x)Nd_(0.4)Sr_xCuO_4 was measured as a function of temperature T near its quantum critical point, the critical hole doping p~* where all characteristic temperatures go to zero. Just above p~*, S/T varies as ln( I /T) over a decade of temperature. Below p~*, SIT undergoes a large increase at low temperature- As with the temperature dependence of the resistivity, which is linear just above p~* and undergoes a large upturn at low temperature, these are typical signatures of a quantum phase transition. This suggests that p~* is a quantum critical point below which some order sets in, causing a reconstruction of the Fermi surface, whose fluctuations are presumably responsible for the linear-T resistivity and logarithmic thermopower. All the evidence points to "stripe" order, a form of spin/charge modulation known to exist in this material.
机译:测量高T_c超导体La_(1.6-x)Nd_(0.4)Sr_xCuO_4的热功率S作为其量子临界点附近的温度T的函数,其中临界空穴掺杂p〜*,所有特征温度都变为零。刚好在p〜*以上,S / T在十年的温度中随ln(I / T)变化。低于p *时,SIT在低温下会发生较大的增加。正如电阻率的温度依赖性(在p〜*上方呈线性关系,而在低温下会经历较大的上翻)一样,这是量子相变的典型特征。这表明p〜*是一个量子临界点,在该临界点以下设置了一些阶数,从而引起了费米表面的重建,费米表面的波动可能与线性T电阻率和对数热功率有关。所有证据都指向“条纹”顺序,这是一种已知存在于这种材料中的自旋/电荷调制形式。

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