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Structural effects and 4f-5d transition shifts induced by La codoping in Ce-doped yttrium aluminum garnet: First-principles study

机译:La共掺杂在Ce掺杂钇铝石榴石中引起的结构效应和4f-5d转变位移:第一性原理研究

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摘要

According to first-principles calculations performed on Ce-doped and Ce,La-codoped yttrium aluminum garnet (YAG) Y_3Al_5O_(12), the effect of La codoping on the local structure around Ce defects in Ce:YAG is an anisotropic expansion in overall, in opposition to recent propositions of local lattice compression. Its effect on the lowest Ce~(3+) 4f→5d transition is found to be a redshift, in agreement with experiments. The redshift is the result of a decrease in the difference between the energy centroids of the 5d~1 and 4f~1 configurations and an increase in the effective ligand field on the Ce 5d shell associated with electronic effects of La substituting for Y. These effects are mitigated by the ligand field decrease associated with the local expansion around Ce, which gives a blueshift contribution of a smaller value. The behavior of the energy difference between the centroids of the configurations cannot be anticipated by the usual model for this quantity, in spite of its usefulness to rationalize 5d→4f luminescences. The second 4f→5d transition is found to be blueshifted upon La codoping, also in agreement with experiments.
机译:根据对Ce掺杂和Ce,La掺杂钇铝石榴石(YAG)Y_3Al_5O_(12)进行的第一性原理计算,La共掺杂对Ce:YAG中Ce缺陷周围的局部结构的影响是整体上的各向异性膨胀与最近提出的局部晶格压缩的主张相反。与实验一致,发现其对最低的Ce〜(3+)4f→5d跃迁的影响是红移。红移是5d〜1和4f〜1构型的能量质心之间的差异减小以及Ce 5d壳上有效配体场增加的结果,这与La取代Y的电子效应有关。通过与Ce周围的局部膨胀相关的配体场的减小来缓解α-α-β-α-β-的降低,这给出了较小值的蓝移贡献。尽管该模型可用于合理化5d→4f发光,但对于该数量,通常的模型无法预测其构形质心之间的能量差行为。发现第二个4f→5d跃迁在La共掺杂后发生蓝移,这也与实验一致。

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  • 来源
    《Physical review》 |2010年第6期|p.064114.1-064114.8|共8页
  • 作者单位

    Departamento de Quimica, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

    rnDepartamento de Quimica Fisica Aplicada, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

    rnDepartamento de Quimica, Universidad Autonoma de Madrid, 28049 Madrid, Spain Instituto Universitario de Ciencia de Materiales Nicolas Cabrera, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

    rnDepartamento de Quimica, Universidad Autonoma de Madrid, 28049 Madrid, Spain Instituto Universitario de Ciencia de Materiales Nicolas Cabrera, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

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  • 正文语种 eng
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  • 关键词

    impurity and defect levels;

    机译:杂质和缺陷水平;

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