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Band structure and optical absorption in multilayer armchair graphene nanoribbons: A Pariser-Parr-Pople model study

机译:多层扶手椅石墨烯纳米带的能带结构和光吸收:Pariser-Parr-Pople模型研究

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Using the tight-binding and Pariser-Parr-Pople model Hamiltonians, we study the electronic structure and optical response of multilayer armchair graphene nanoribbons (AGNRs), both with and without a gate bias. In particular, the influence of the number of layers (n), and the strength of the electric field applied perpendicularly to layers, for different types of edge alignments is explored via their electro-optical properties. As a function of increasing n, the energy gap initially decreases, eventually saturating for large n. The intensity of the linear optical absorption in these systems also increases with increasing n and depends crucially on the polarization direction of the incident light and the type of the edge alignment. This provides an efficient way of determining the nature of the edge alignment, and n, in the experiments. In the presence of a gate bias, the intensity of optical absorption behaves in a nontrivial way. The absorption becomes more intense for the large fields in narrow ribbons exhibiting a redshift of the band gap with the increasing field strength, while in broad ribbons exhibiting a blueshift, the absorption becomes weaker. However, for smaller electric fields, the absorption intensity exhibits more complicated behavior with respect to the field strength. Thus, the effect of the gate bias on optical absorption intensity in multilayer AGNRs is in sharp contrast to bilayer graphene, which exhibits only enhancement of the absorption intensity with the increasing electric field.
机译:使用紧密结合和Pariser-Parr-Pople模型哈密顿量,我们研究了带有或不带有门偏置的多层扶手椅石墨烯纳米带(AGNR)的电子结构和光学响应。尤其是,通过不同类型的边缘对准,研究了层数(n)的影响以及垂直施加到层上的电场强度的影响,通过它们的电光特性。作为增加n的函数,能隙最初减小,最终对大n饱和。在这些系统中,线性光学吸收的强度也随n的增加而增加,并且主要取决于入射光的偏振方向和边缘对准的类型。这提供了确定实验中边缘对齐n和n的性质的有效方法。在存在栅极偏置的情况下,光吸收的强度表现得很平常。对于窄带中的大场,随着带隙强度的增加,带隙发生红移,吸收变得更强;而在宽带中,出现蓝移,其吸收变弱。然而,对于较小的电场,相对于场强,吸收强度表现出更复杂的行为。因此,栅极偏压对多层AGNRs中光吸收强度的影响与双层石墨烯形成了鲜明的对比,双层石墨烯仅随电场的增加而呈现出吸收强度的增强。

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