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Charge and spin criticality for the continuous Mott transition in a two-dimensional organic conductor

机译:二维有机导体中连续Mott跃迁的电荷和自旋临界

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摘要

We study the continuous bandwidth-controlled Mott transition in the two-dimensional single-band Hubbard model with a focus on the critical scaling behavior of charge and spin degrees of freedom. Using plaquette cluster dynamical mean-field theory, we find charge and spin criticality consistent with experimental results for organic conductors. In particular, the charge degree of freedom calculated via the local density of states at the Fermi level shows a smoother transition than expected for the Ising universality class and in single-site dynamical mean-field theory, revealing the importance of short-ranged nonlocal correlations in two spatial dimensions. The spin criticality obtained from the local spin susceptibility agrees quantitatively with nuclear magnetic resonance measurements of the spin-lattice relaxation rate.
机译:我们研究了二维单波段Hubbard模型中连续带宽控制的Mott跃迁,重点是电荷和自旋自由度的临界缩放行为。使用球团簇动态平均场理论,我们发现电荷和自旋临界与有机导体的实验结果一致。特别是,通过费米能级的局部态密度计算出的电荷自由度显示出比Ising普适性类和单点动力平均场理论所预期的平稳过渡,从而揭示了短程非局部相关性的重要性在两个空间维度上。从局部自旋磁化率获得的自旋临界度在数量上与自旋晶格弛豫率的核磁共振测量结果一致。

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  • 来源
    《Physical review》 |2011年第16期|p.165133.1-165133.5|共5页
  • 作者单位

    Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics,University of Augsburg, D-86135 Augsburg, Germany,Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory,2575 Sand Hill Road, Menlo Park, California 94025, USA;

    Theoretische Physik, ETH Zurich, CH-8093 Zurich, Switzerland;

    Department of Physics, Columbia University, New York, 10027, USA;

    Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics,University of Augsburg, D-86135 Augsburg, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    lattice fermion models (hubbard model, etc.); metal-insulator transitions and other electronic transitions; organic superconductors;

    机译:晶格费米子模型(哈伯德模型等);金属-绝缘体跃迁和其他电子跃迁;有机超导体;

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