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首页> 外文期刊>Physical review >Polycrystalline Ni thin films on nanopatterned Si substrates: From highly conformal to nonconformal anisotropic growth
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Polycrystalline Ni thin films on nanopatterned Si substrates: From highly conformal to nonconformal anisotropic growth

机译:纳米图案化的Si衬底上的多晶Ni薄膜:从高度共形到非共形各向异性生长

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摘要

The growth of polycrystalline Ni thin films on nanorippled Si templates is investigated in situ by grazing incidence small angle x-ray scattering as well as ex situ by atomic force microscopy and cross-sectional transmission electron microscopy. The templates have been fabricated by low-energy ion sputtering which leads to the spontaneous formation of a periodic ripple pattern with about 33 nm periodicity and about 3 nm peak-to-peak height. Highly conformal growth of the Ni film is observed under normal incidence deposition with the film surface perfectly replicating the substrate morphology up to a film thickness of at least 120 nm. Grazing incidence deposition perpendicular to the ripple orientation leads to the formation of one-dimensional nanowires on one side of the ripples due to geometrical shadowing. At a film thickness of about 10 nm, a transition to anisotropic columnar growth with rapidly decreasing conformity is observed. In this regime, the nanowires act as growth seeds for the columns and further geometrical shadowing leads to a film consisting of rows of tilted columns.
机译:通过掠入射小角度X射线散射原位研究了纳米波纹Si模板上多晶Ni薄膜的生长,以及通过原子力显微镜和截面透射电子显微镜在原位研究了多晶Ni薄膜的生长。模板是通过低能离子溅射法制造的,低能离子溅射法可自发形成周期性波纹图案,其周期性约为33 nm,峰峰高度约为3 nm。在垂直入射沉积下观察到Ni膜的高度共形生长,其中膜表面完美地复制了基底形态直至至少120nm的膜厚度。垂直于波纹取向的掠入射沉积由于几何遮蔽而导致在波纹的一侧上形成一维纳米线。在约10nm的膜厚度下,观察到以快速降低的适形性向各向异性柱状生长过渡。在这种情况下,纳米线充当柱的生长种子,并且进一步的几何遮蔽导致薄膜由倾斜的列的行组成。

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  • 来源
    《Physical review》 |2011年第3期|p.035423.1-035423.6|共6页
  • 作者单位

    Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, P.O. Box 510119,01314 Dresden, Germany,Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Ny Munkegade, 8000 Aarhus C, Denmark;

    European Synchrotron Radiation Facility, BP 220,38043 Grenoble Cedex, France;

    Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, P.O. Box 510119,01314 Dresden, Germany;

    Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, P.O. Box 510119,01314 Dresden, Germany;

    Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, P.O. Box 510119,01314 Dresden, Germany;

    Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, P.O. Box 510119,01314 Dresden, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    interface structure and roughness; X-ray scattering; surface cleaning; etching, patterning;

    机译:界面结构和粗糙度;X射线散射;表面清洁;蚀刻;图案;

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