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首页> 外文期刊>Physical review >Nonlinear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs
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Nonlinear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs

机译:InGaAs / InP和GaAs / AlGaAs中高迁移率二维电子中的非线性磁传输现象

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This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance r_(xx) = dV_(xx)/dI of high-mobility In_xGa_(1-x)As/InP and GaAs/Al_xGa_(1-x)As Hall bar samples driven by direct current I_(dc). Specifically, it is observed that Shubnikov-de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of I_(dc). This phase inversion is explained as being due to an electron heating effect. In the quantum Hall effect regime the r_(xx) oscillations transform into diamond-shaped patterns with different slopes corresponding to odd and even filling factors. The diamond-shaped features at odd filling factors can be used as a probe to determine spin energy gaps. A zero current anomaly (ZCA) which manifests itself as a narrow dip in the r_(xx)(I_(dc)) characteristics at zero current is also observed. The ZCA effect strongly depends upon temperature, vanishing above 1 K while the transport diamonds persist to higher temperatures. The transport diamonds and ZCA are fully reproduced in a higher mobility GaAs/AlGaAs Hall bar structure confirming that these phenomena reflect intrinsic properties of two-dimensional systems.
机译:本文报道了在高迁移率In_xGa_(1-x)As / InP和GaAs / Al_xGa_(1-x)As的非线性差分电阻r_(xx)= dV_(xx)/ dI中的磁传输现象的观察和分析。由直流电流I_(dc)驱动的霍尔棒样品。具体地,观察到在大填充因子下的Shubnikov-de Haas(SdH)振荡在足够大的I_(dc)值下将其相位反转。这种相变被解释为由于电子加热效应。在量子霍尔效应状态下,r_(xx)振荡转换为菱形图案,斜率不同,分别对应于奇数和偶数填充因子。奇数填充系数下的菱形特征可以用作确定自旋能隙的探针。还观察到零电流异常(ZCA),它表现为零电流时r_(xx)(I_(dc))特性的窄谷。 ZCA效应很大程度上取决于温度,在传输钻石持续较高温度时,其消​​失在1 K以上。运输金刚石和ZCA在更高迁移率的GaAs / AlGaAs霍尔棒结构中得到了完全复制,这证实了这些现象反映了二维系统的固有特性。

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