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State diagram of nanopillar spin valves with perpendicular magnetic anisotropy

机译:具有垂直磁各向异性的纳米柱自旋阀的状态图

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摘要

The spin-torque switching of metallic nanopillar spin valves showing strong perpendicular anisotropy are studied. The magnetic states of the layers depend on extrinsic parameters such as the magnetic field and the dc current applied to the device. A state diagram presents a comprehensive graph of the role of those parameters on the spin-valve magnetic response. After explaining how state diagrams can be built and the different possible representation, experimental state diagrams are studied for perpendicular devices and the influence of lateral size, temperature, and field orientation are shown. An analytical model of a purely uniaxial system is presented. It is shown that this simple model does not properly reflect the experimental results, whereas if the symmetry is broken a qualitative agreement is obtained. Finally, the possible origins of the symmetry break are discussed in light of an analytical model and numerical simulations.
机译:研究了具有强垂直各向异性的金属纳米柱自旋阀的自旋转矩转换。层的磁性状态取决于外部参数,例如磁场和施加到设备的直流电流。状态图显示了这些参数在自旋阀磁响应中的作用的综合图。在解释了如何构建状态图和不同的可能表示形式之后,研究了垂直设备的实验状态图,并显示了横向尺寸,温度和场方向的影响。提出了一个纯单轴系统的解析模型。结果表明,该简单模型不能正确反映实验结果,而如果对称性被破坏,则会获得定性一致性。最后,根据解析模型和数值模拟讨论了对称断裂的可能起源。

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  • 来源
    《Physical review》 |2012年第1期|p.014419.1-014419.16|共16页
  • 作者单位

    Institut Jean Lamour, UMR CNRS 7198, Nancy Universite, Vandoeuvre les Nancy, France;

    Institut Jean Lamour, UMR CNRS 7198, Nancy Universite, Vandoeuvre les Nancy, France;

    Institut Jean Lamour, UMR CNRS 7198, Nancy Universite, Vandoeuvre les Nancy, France;

    Institut Jean Lamour, UMR CNRS 7198, Nancy Universite, Vandoeuvre les Nancy, France;

    Institut Jean Lamour, UMR CNRS 7198, Nancy Universite, Vandoeuvre les Nancy, France;

    Institut de Physique et Chimie des Materiaux de Strasbourg, CNRS, UDS, France;

    Department of Physics, New York University, New York, New York 10003, USA;

    Department of Physics, New York University, New York, New York 10003, USA;

    Department of Physics, New York University, New York, New York 10003, USA;

    Department of Physics, New York University, New York, New York 10003, USA;

    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA;

    Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris Sud, France;

    Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris Sud, France;

    Hitachi Global Storage Technologies, San Jose Research Center, San Jose, California, USA;

    Center of Magnetic Recording Research, University of California, San Diego La Jolla, California 92093-0401, USA;

    Institut Jean Lamour, UMR CNRS 7198, Nancy Universite, Vandoeuvre les Nancy, France;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    spin polarized transport in metals; magnetic memory using giant magnetoresistance; magnetic anisotropy;

    机译:在金属中旋转极化传输;使用巨大的磁阻的磁存储器;磁各向异性;

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