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Signatures of quantum criticality in hole-doped and chemically pressurized EuFe_2As_2 single crystals

机译:空穴掺杂和化学加压的EuFe_2As_2单晶中的量子临界特征

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We study the effect of hole doping and chemical pressure (isovalent doping) in single crystals of K_x Eu_(1-x) Fe_2 As_2 and EuFe_2(As_(1-y)P_y)_2, respectively, by measuring the thermopower, S(T) and electrical resistivity, ρ(T). The evolution of S(T) upon doping indicates drastic changes in the electronic configuration at critical values x_(cr) = 0.3 and y_(cr) = 0.21, respectively, as the spin-density-wave transition is completely suppressed and superconductivity (SC) emerges. For the case of chemical pressure, a comparison with published ARPES measurements indicates a Lifshitz transition at y_(cr). The temperature dependences S(T)/T ∝ log T and △ρ ∝ T observed in the normal state above the SC transition suggest quantum criticality in both systems.
机译:通过测量热功率S(T),我们分别研究了K_x Eu_(1-x)Fe_2 As_2和EuFe_2(As_(1-y)P_y)_2单晶中空穴掺杂和化学压力(等效掺杂)的影响。 )和电阻率ρ(T)。掺杂时S(T)的演化表明,在自旋密度波跃迁得到完全抑制和超导电性(SC)时,在临界值x_(cr)= 0.3和y_(cr)= 0.21时,电子结构发生了急剧变化。 )出现。对于化学压力,将其与已发布的ARPES测量结果进行比较,即可得出y_(cr)处的Lifshitz跃迁。在SC转变以上的正常状态下观察到的温度依赖性S(T)/ T ∝ log T和△ρ∝ T暗示了这两个系统的量子临界性。

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