机译:六方氮化硼/金属界面的肖特基势垒:第一性原理研究
Faculty of Science and Technology and MESA~+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;
Faculty of Science and Technology and MESA~+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;
Radboud University of Nijmegen, Institute for Molecules and Materials, Heijendaalseweg 135, NL-6525 AJ Nijmegen, The Netherlands;
Faculty of Science and Technology and MESA~+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;
surface double layers, schottky barriers, and work functions; surface states, band structure, electron density of states; interfaces; heterostructures; nanostructures;
机译:在金属(Co,Cu,Fe,Ni)掺杂六边形氮化物纳米液的吸附:一项研究
机译:六角形氮化物氮化物封装单层WSE2隧道场效应晶体管中的UltraLow肖特基障碍
机译:六方氮化硼界面层的石墨烯-GaN异质结的肖特基势垒二极管特性
机译:第一性原理研究:金属/硅界面上的结构紊乱引起的肖特基势垒变化
机译:金属绝缘体 - 金属装置的单层六边形氮化硼膜的分子束外延生长
机译:石墨烯/金属氧化物界面的肖特基势垒:第一性原理计算的见解
机译:六方氮化硼/金属界面的肖特基势垒:第一性原理研究