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Ab initio computation of the transition temperature of the charge density wave transition in TiSe_2

机译:从头算计算TiSe_2中电荷密度波跃迁的跃迁温度

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摘要

We present a density functional perturbation theory approach to estimate the transition temperature of the charge density wave transition of TiSe_2 The softening of the phonon mode at the L point where in TiSe_2 a giant Kohn anomaly occurs, and the energy difference between the normal and distorted phase are analyzed. Both features are studied as functions of the electronic temperature, which corresponds to the Fermi-Dirac distribution smearing value in the calculation. The transition temperature is found to be 500 and 600 K by phonon and energy analysis, respectively, in reasonable agreement with the experimental value of 200 K.
机译:我们提出了一种密度泛函微扰理论方法来估算TiSe_2的电荷密度波跃迁的跃迁温度。在LSe点处发生声子模态的软化,在TiSe_2中发生巨大的Kohn异常,并且正相和畸变相之间的能量差被分析。研究了这两个特征作为电子温度的函数,这与计算中的费米-狄拉克分布拖尾值相对应。通过声子和能量分析发现过渡温度分别为500 K和600 K,与200 K的实验值合理一致。

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  • 来源
    《Physical review》 |2015年第24期|245131.1-245131.8|共8页
  • 作者单位

    Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany;

    Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany;

    Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany;

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