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机译:氮化物半导体间接俄歇复合的第一性原理计算
Materials Department, University of California, Santa Barbara, California 93106-5050, USA,Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA;
Materials Department, University of California, Santa Barbara, California 93106-5050, USA;
Materials Department, University of California, Santa Barbara, California 93106-5050, USA,COMP/Department of Applied Physics, Aalto University, P.O. Box 11100, Aalto FI-00076, Finland;
Materials Department, University of California, Santa Barbara, California 93106-5050, USA;
Materials Department, University of California, Santa Barbara, California 93106-5050, USA;
charge carriers: generation; recombination; lifetime; and trapping; optoelectronic device characterization; design; and modeling; light-emitting devices;
机译:间接俄歇重组是氮化物发光二极管效率下降的原因
机译:直接间隙和间接间隙半导体纳米晶体中俄歇复合的普遍尺寸依赖性趋势
机译:ILL-氮化物中辐射和螺旋钻重组的补偿:分离 - 波飞角重组的扩大规律
机译:氮化物半导体空位旋转极化的第一原理计算
机译:光电材料中螺旋钻重组的第一原理计算
机译:聚吡咯功能化对硼氮化物纳米型阳极性能的影响:第一原理计算的见解
机译:氮化物半导体间接俄歇复合的第一性原理计算