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Low-temperature resistivity, magnetoresistance, and domain-wall resistance of highly pure single- and polycrystalline iron

机译:高纯单晶和多晶铁的低温电阻率,磁阻和畴壁电阻

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摘要

On a set of 12 bulk and highly pure [residual resistance ratio (RRR) up to 6000] iron single crystals with different crystallographic orientation and on polycrystalline material the "hidden" basic resistivity ρ(T,B → 0) and magnetoresistive effects (anisotropic magnetoresistance, longitudinal and transverse Lorentz resistance) are quantitatively disentangled. The temperature-dependent basic resistivity for T ≤ 30 K follows a Δρ(T,B → 0) = aT~2 + bT~5 law, proving that electron-electron and electron-phonon scattering (with a resistive Debye temperature Θ_R ≈ 450 K) are dominant also in iron, similar to nowferromagnetic transition metals. Here the crystal-orientation dependence of the intrinsic longitudinal magnetoresistance in the single-domain state could be quantitatively evaluated in accordance with the symmetry of the Fermi surface. The transverse magnetoresistance (TMR) turns out to be the sum of the so-called "two-band conduction term" and the unboundedly growing TMR term in compensated metals. It is proven that the second term is not restricted to the high-field limit (as usually discussed up to now) but acts down to lowest TMR or ω_Cτ values. This conclusion is verified by TMR measurements on highly pure molybdenum single crystals (RRR ≈ 100000). Supported by Kerr microscopy, a small positive domain wall resistance (DWR) could be isolated from the dominating negative DWR in the multidomain state of iron, resulting in a relation of larger than 5:1 for the electrons to pass a domain wall with spin tracking compared to scattering with spin conservation.
机译:在一组12个块状且高纯度[高达6000的残余电阻比(RRR)]上具有不同晶体学取向的铁单晶,以及在多晶材料上的“隐藏”基本电阻率ρ(T,B→0)和磁阻效应(各向异性)磁阻,纵向和横向洛伦兹电阻)在数量上是纠缠的。 T≤30 K时,与温度相关的基本电阻率遵循Δρ(T,B→0)= aT〜2 + bT〜5定律,证明了电子-电子和声子的散射(电阻式德拜温度Θ_R≈450) K)在铁中也占主导地位,类似于现在的铁磁过渡金属。在此,可以根据费米表面的对称性定量地评价单畴状态下的固有纵向磁阻的晶体取向依赖性。事实证明,横向磁阻(TMR)是补偿金属中所谓的“双带导通项”和无限增长的TMR项之和。事实证明,第二项不限于高场限制(如目前为止通常讨论的那样),而是作用到最低的TMR或ω_Cτ值。通过对高纯钼单晶(RRR≈100000)进行TMR测量,可以验证这一结论。在Kerr显微镜的支持下,可以在铁的多畴态中从占主导地位的负DWR中分离出小的正畴壁电阻(DWR),从而使电子以自旋跟踪通过畴壁的关系大于5:1与具有自旋守恒的散射相比。

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