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Anomalous Hall effect and spin-orbit torques in MnGa/IrMn films: Modification from strong spin Hall effect of the antiferromagnet

机译:MnGa / IrMn薄膜中的异常霍尔效应和自旋轨道转矩:反铁磁体的强自旋霍尔效应的修正

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摘要

We report systematic measurements of anomalous Hall effect (AHE) and spin-orbit torques (SOTs) in MnGa/IrMn films, in which a single L1_0-MnGa epitaxial layer reveals obvious orbital two-channel Kondo (2CK) effect. As increasing the thickness of the antiferromagnet IrMn, the strong spin Hall effect (SHE) has gradually suppressed the orbital 2CK effect and modified the AHE of MnGa. A scaling involving multiple competing scattering mechanisms has been used to distinguish different contributions to the modified AHE. Finally, the sizeable SOT in the MnGa/IrMn films induced by the strong SHE of IrMn have been investigated. The IrMn layer also supplies an in-plane exchange bias field and enables nearly field-free magnetization reversal.
机译:我们报告了MnGa / IrMn薄膜中异常霍尔效应(AHE)和自旋轨道转矩(SOT)的系统测量,其中单个L1_0-MnGa外延层显示出明显的轨道两通道近藤效应(2CK)。随着反铁磁体IrMn厚度的增加,强自旋霍尔效应(SHE)逐渐抑制了轨道2CK效应并改变了MnGa的AHE。涉及多种竞争性散射机制的标度已用于区分对改进的AHE的不同贡献。最后,研究了由IrMn的强SHE引起的MnGa / IrMn膜中的相当大的SOT。 IrMn层还提供面内交换偏置场,并实现几乎无场的磁化反转。

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  • 来源
    《Physical review》 |2016年第21期|214413.1-214413.7|共7页
  • 作者单位

    School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

    School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

    School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

    School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

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