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Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime

机译:单极输运中双极子辅助有机磁阻的统一渗流模型

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摘要

The fact that in organic semiconductors the Hubbard energy is usually positive appears to be at variance with a bipolaron model to explain magnetoresistance (MR) in those systems. Employing percolation theory, we demonstrate that a moderately positive U is indeed compatible with the bipolaron concept for MR in unipolar current flow, provided that the system is energetically disordered, and the density of states (DOS) distribution is partially filled, so that the Fermi level overlaps with tail states of the DOS. By exploring a broad parameter space, we show that MR becomes maximal around U = 0 and even diminishes at large negative values of U because of spin independent bipolaron dissociation. Trapping effects and reduced dimension enhance MR.
机译:在有机半导体中,Hubbard能量通常为正的事实似乎与解释这些系统中的磁阻(MR)的双极子模型有所不同。利用渗流理论,我们证明了一个中等正的U确实与单极电流中MR的双极子概念相容,只要该系统在能量上无序,并且状态密度(DOS)分布被部分填充,从而费米级别与DOS的尾部状态重叠。通过探索广阔的参数空间,我们表明,由于自旋无关的双极子解离,MR在U = 0附近变为最大值,甚至在U的较大负值处减小。陷印效果和减小的尺寸增强了MR。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2016年第7期|075201.1-075201.7|共7页
  • 作者单位

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Bayreuth Institute of Macromolecular Research (BIMF), University of Bayreuth, D-95440 Bayreuth, Germany;

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