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机译:反向偏置平面p-n结中自旋霍尔电压的增强
Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic,Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Praha 2, Czech Republic;
Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic;
Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Praha 2, Czech Republic;
Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic;
Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Praha 2, Czech Republic,Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic;
Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic,Hitachi Cambridge Laboratory, J. J. Thomson Avenue, CB3 0HE Cambridge, United Kingdom;
Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Praha 2, Czech Republic;
Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic,School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
机译:反向偏置平面p-n结中自旋霍尔电压的增强
机译:在(001)取向的Fe4N / Pt多晶薄膜中增强的自旋霍尔逆电压,而没有平面霍尔效应
机译:互连对平面高压p-n结击穿电压的影响
机译:平面,高压,硼植入6H-SiC P-N结二极管
机译:带有旋涂掺杂剂的微米和纳米柱上浅p-n结的形成,用于太阳能电池。
机译:压电压控平面霍尔效应器件
机译:反向偏置平面p-n结中自旋霍尔电压的增强