Enhanced inverse spin-Hall voltage in (001) oriented Fe4N/Pt polycrystalline films without contribution of planar-Hall effect

摘要

In this study, the output DC electric voltage (V-out) generated by a Pt-capped Fe4N bilayer film (Fe4N/Pt) under ferromagnetic resonance conditions at room temperature was assessed. The contributions from the inverse spin-Hall effect (ISHE), the planar-Hall effect (PHE) and the anomalous-Hall effect (AHE) were separated from the output voltage by analysis of V-out values determined at varying external field polar angles. The results showed that the polarity of the ISHE (V-ISHE) component of V-out was opposite to that of the PHE (V-PHE). As a result, the magnitude of the intrinsic V-ISHE was beyond V-out by as much as the magnitude of V-PHE. The X-ray diffraction structural analysis revealed the polycrystal of the Fe4N/Pt with (001) orientation, which might be one of the possible mechanisms for enhanced intrinsic V-ISHE. (C) 2016 The Japan Society of Applied Physics