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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Spin-wave excitation modes in thick vortex-state circular ferromagnetic nanodots
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Spin-wave excitation modes in thick vortex-state circular ferromagnetic nanodots

机译:厚涡态圆形铁磁纳米点中的自旋波激发模式

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摘要

We study both experimentally and using micromagnetic simulations how the spin excitation spectra of the vortex-state circular dots made of soft magnetic material change with the dot thickness t in the range t = 20-80 nm. It is found that in addition to higher-order gyrotropic modes which are nonuniform along the dot thickness and were observed earlier, azimuthal spin-wave modes having curled structure at the dot top and bottom faces appear in the spectrum when increasing the dot thickness. For the dot thickness r > 50 nm these "curled" modes become the lowest ones in the spin-wave excitation spectrum. It is also shown that all spin-wave modes with azimuthal index m = ±1 are hybridized with the vortex gyrotropic modes. However, while "common" azimuthal (0, ±1) modes are hybridized with the main gyrotropic G_0 mode and reveal large frequency splitting of their doublet, the curled modes can be hybridized with higher-order gyrotropic modes and the doublet frequency splitting vanishes with the dot thickness increase.
机译:我们通过实验和微磁模拟研究了由软磁性材料制成的涡旋状态圆点的自旋激发光谱如何随点厚度t在t = 20-80 nm范围内变化而变化。发现除了沿点厚度不均匀且较早观察到的高阶回旋模,当增加点厚度时,在点顶面和底面具有卷曲结构的方位自旋波模出现在光谱中。当点厚度r> 50 nm时,这些“弯曲”模式成为自旋波激发光谱中的最低模式。还表明,所有方位角m =±1的自旋波模式都与涡旋回旋模式混合。但是,尽管“通用”方位角(0,±1)模式与主要回旋G_0模式混合并显示出其双峰的大频率分裂,但是卷曲模式可以与高阶回旋模式杂交,并且双峰分频随着点厚度增加。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2016年第21期|214437.1-214437.10|共10页
  • 作者单位

    IFIMUP-IN/Departamento de Fisica e Astronomia, Universidade do Porto, 4169-007 Porto, Portugal,Institute of Magnetism, National Academy of Sciences of Ukraine, Kyiv 03142, Ukraine;

    IFIMUP-IN/Departamento de Fisica e Astronomia, Universidade do Porto, 4169-007 Porto, Portugal;

    IFIMUP-IN/Departamento de Fisica e Astronomia, Universidade do Porto, 4169-007 Porto, Portugal;

    Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;

    Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;

    Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;

    Departamento de Fisica de Materiales, Universidad del Pais Vasco, UPV/EHU, 20018 San Sebastian, Spain,IKERBASQUE, the Basque Foundation for Science, 48013 Bilbao, Spain;

    IFIMUP-IN/Departamento de Fisica e Astronomia, Universidade do Porto, 4169-007 Porto, Portugal,Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;

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