机译:纳米线中多个GaN / AlN量子盘中量子限制的Stark效应和发射效率下降的纳米级监测
Instituto de Fisica 'Gleb Wataghin' Universidade Estadual de Campinas - Unicamp, 13083-859, Campinas, Sao Paulo, Brasil;
Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, 91405 Orsay Cedex, France;
Instituto de Fisica 'Gleb Wataghin' Universidade Estadual de Campinas - Unicamp, 13083-859, Campinas, Sao Paulo, Brasil;
Institute of Physics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland;
Groupe de Physique des Materiaux, UMR CNRS 6634, Universite et INSA de Rouen, Normandie University, 76800 St Etienne du Rouvray, France;
Institut d'Electronique Fondamentale, University Paris Sud, University Paris Saclay, Orsay 91405, France;
Institut d'Electronique Fondamentale, University Paris Sud, University Paris Saclay, Orsay 91405, France;
CEA-CNRS group 'Nanophysique et Semiconducteurs', Institute Neel, Grenoble 38054, France;
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, 91405 Orsay Cedex, France;
机译:纳米线中多个GaN / AlN量子盘中量子限制的Stark效应和发射效率下降的纳米级监测
机译:通过分子束外延(Vol 19,PG 5938,2019)生长(Al,Ga)n纳米线的GaN量子磁盘中的量子狭窄的缺陷效应
机译:纳米线中GaN / AlN量子点中量子受限Stark效应的证据
机译:高效横向电动显性紫外线-C发射在A1N纳米线矩阵中采用GaN多量子磁盘
机译:氮化铟镓/氮化镓多量子阱LED的工程效率下降
机译:InGaN / GaN多量子阱LED纳米线中的载流子局部化效应:发光量子效率的提高和负热活化能
机译:纳米级纳米线中多个GaN / AlN量子盘中量子限制的斯塔克效应和发射效率下降的纳米级监测