首页> 外文期刊>Physical review >Anisotropy of electron and hole g tensors of quantum dots: An intuitive picture based on spin-correlated orbital currents
【24h】

Anisotropy of electron and hole g tensors of quantum dots: An intuitive picture based on spin-correlated orbital currents

机译:电子和量子点的空穴g张量的各向异性:基于自旋相关轨道电流的直观图片

获取原文
获取原文并翻译 | 示例
           

摘要

Using single spins in semiconductor quantum dots as qubits requires full control over the spin state. As the g tensor provides the coupling in a Hamiltonian between a spin and an external magnetic field, a deeper understanding of the g tensor underlies magnetic-field control of the spin. The g tensor is affected by the presence of spin-correlated orbital currents, of which the spatial structure has been recently clarified. Here we extend that framework to investigate the influence of the shape of quantum dots on the anisotropy of the electron g tensor. We find that the spin-correlated orbital currents form a simple current loop perpendicular to the magnetic moment's orientation. The current loop is therefore directly sensitive to the shape of the nanostructure: for cylindrical quantum dots, the electron g-tensor anisotropy is mainly governed by the aspect ratio of the dots. Through a systematic experimental study of the size dependence of the separate electron and hole g tensors of InAs/InP quantum dots, we have validated this picture. Moreover, we find that through size engineering it is possible to independently change the sign of the in-plane and growth direction electron g factors. The hole g tensor is found to be strongly anisotropic and very sensitive to the radius and elongation. The comparable importance of itinerant and localized currents to the hole g tensor complicates the analysis relative to the electron g tensor.
机译:使用半导体量子点中的单个自旋作为量子位需要完全控制自旋状态。由于g张量在自旋和外部磁场之间的哈密顿量中提供了耦合,因此对g张量的更深入了解是自旋的磁场控制的基础。 g张量受自旋相关的轨道电流的影响,最近已经弄清了其空间结构。在这里,我们扩展该框架,以研究量子点形状对电子g张量各向异性的影响。我们发现自旋相关的轨道电流形成一个垂直于磁矩方向的简单电流回路。因此,电流回路对纳米结构的形状直接敏感:对于圆柱量子点,电子g张量各向异性主要由这些点的长宽比决定。通过对InAs / InP量子点的独立电子张量和空穴g张量的尺寸依赖性进行系统的实验研究,我们验证了这张图片。此外,我们发现通过尺寸工程可以独立改变面内电子g因子的符号和生长方向电子g因子。发现孔g张量是强烈各向异性的,并且对半径和伸长率非常敏感。相对于空穴g张量的巡回电流和局部电流的重要性相当,相对于电子g张量,分析变得复杂。

著录项

  • 来源
    《Physical review》 |2016年第3期|035311.1-035311.10|共10页
  • 作者单位

    PSN, COBRA, University of Technology Eindhoven, 5600 MB Eindhoven, The Netherlands, Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA;

    PSN, COBRA, University of Technology Eindhoven, 5600 MB Eindhoven, The Netherlands;

    PSN, COBRA, University of Technology Eindhoven, 5600 MB Eindhoven, The Netherlands;

    Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA;

    PSN, COBRA, University of Technology Eindhoven, 5600 MB Eindhoven, The Netherlands, Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA;

    PSN, COBRA, University of Technology Eindhoven, 5600 MB Eindhoven, The Netherlands;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号