机译:MgAl_2O_4和MgO势垒厚度的变化增强基于CoFeB的磁性隧道结中的热电压和隧道磁塞贝克效应
Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;
Institut fuer Physik, Greifswald University, Felix-Hausdorff-Strasse 6, 17489 Greifswald, Germany;
Institut fuer Physik, Greifswald University, Felix-Hausdorff-Strasse 6, 17489 Greifswald, Germany;
Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;
Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;
Institut fuer Theoretische Physik, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;
Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), Institute for Metallic Materials,Helmholtzstrasse 20, 01069 Dresden, Germany;
Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;
Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany,Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands;
Institut fuer Physik, Greifswald University, Felix-Hausdorff-Strasse 6, 17489 Greifswald, Germany;
机译:通过MGAL_2O_4和MGO屏障厚度的变化,增强CoFeB基磁隧道结的热压和隧道磁耳效应
机译:CoFeB / MgAl_2O_4和CoFeB / MgO磁性隧道结中激光诱导和本征隧道磁塞贝克效应的比较
机译:带有NiFeSiB / CoFeB自由层的磁性隧道结的磁阻变化取决于MgO隧道势垒厚度
机译:MgO隧道屏障厚度对GDFECO / FECO / MgO / FECO / TBFE / CO垂直磁化磁隧道结中磁滞的影响
机译:具有MgO隧道势垒的垂直磁性隧道结
机译:MgO下层对外延Fe / GaOx /(MgO)/ Fe磁性隧道结结构中GaOx隧道势垒生长的影响
机译:增强CoFeB中的热电压和隧道磁塞贝克效应 基于mgal $ _2 $ O $ _4 $和mgO的变化的磁隧道结 屏障厚度