首页> 外文期刊>Physical review >Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB-based magnetic tunnel junctions by variation of the MgAl_2O_4 and MgO barrier thickness
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Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB-based magnetic tunnel junctions by variation of the MgAl_2O_4 and MgO barrier thickness

机译:MgAl_2O_4和MgO势垒厚度的变化增强基于CoFeB的磁性隧道结中的热电压和隧道磁塞贝克效应

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摘要

We investigate the influence of the barrier thickness of Co_(40)Fe_(40)B_(20)-based magnetic tunnel junctions (MTJs) on the laser-induced tunnel magneto-Seebeck (TMS) effect. Varying the barrier thickness from 1 to 3 nm, we find a distinct maximum in the TMS effect for a 2.6-nm barrier thickness. This maximum is measured independently for two barrier materials, namely, MgAl_2O_4 (MAO) and MgO. Additionally, samples with a MAO barrier exhibit a high thermovoltage of more than 350 μV in comparison to 90 μV for the MTJs with a MgO barrier when heated with the maximum laser power of 150 mW. Our results allow for the fabrication of improved stacks when dealing with temperature differences across MTJs for future applications in spin caloritronics, the emerging research field that combines spintronics and thermoelectrics.
机译:我们研究了基于Co_(40)Fe_(40)B_(20)的磁性隧道结(MTJs)的势垒厚度对激光诱导隧道磁塞贝克(TMS)效应的影响。从1到3 nm的势垒厚度变化,我们发现在2.6 nm势垒厚度的TMS效应中有明显的最大值。对于两种阻隔材料,即MgAl_2O_4(MAO)和MgO,独立测量该最大值。此外,具有MAO势垒的样品在以150 mW的最大激光功率加热时,与具有MgO势垒的MTJ相比,具有90μV的高热电压,高于350μV。我们的结果可以解决MTJ之间的温差问题,从而制造出改进的烟囱,以备将来在自旋量热电子学中应用,这是将自旋电子学和热电学相结合的新兴研究领域。

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  • 来源
    《Physical review》 |2017年第21期|214435.1-214435.7|共7页
  • 作者单位

    Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;

    Institut fuer Physik, Greifswald University, Felix-Hausdorff-Strasse 6, 17489 Greifswald, Germany;

    Institut fuer Physik, Greifswald University, Felix-Hausdorff-Strasse 6, 17489 Greifswald, Germany;

    Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;

    Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;

    Institut fuer Theoretische Physik, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

    Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), Institute for Metallic Materials,Helmholtzstrasse 20, 01069 Dresden, Germany;

    Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany;

    Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitatsstraβe 25, 33615 Bielefeld, Germany,Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands;

    Institut fuer Physik, Greifswald University, Felix-Hausdorff-Strasse 6, 17489 Greifswald, Germany;

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