...
首页> 外文期刊>Physical review >Quantum phase transition under pressure in the heavily hydrogen-doped iron-based superconductor LaFeAsO
【24h】

Quantum phase transition under pressure in the heavily hydrogen-doped iron-based superconductor LaFeAsO

机译:重氢掺杂铁基超导体LaFeAsO在压力下的量子相变

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Hydrogen (H)-doped LaFeAsO is a prototypical iron-based superconductor. However, its phase diagram extends beyond the standard framework, where a superconducting (SC) phase follows an antiferromagnetic (AF) phase upon carrier doping; instead, the SC phase is sandwiched between two AF phases appearing in lightly and heavily H-doped regimes. We performed nuclear magnetic resonance (NMR) measurements under pressure, focusing on the second AF phase in the heavily H-doped regime. The second AF phase is strongly suppressed when a pressure of 3.0 GPa is applied, and apparently shifts to a highly H-doped regime, thereby a "bare" quantum critical point (QCP) emerges. A quantum critical regime emerges in a paramagnetic state near the QCP, however, the influence of the AF critical fluctuations to the SC phase is limited in the narrow doping regime near the QCP. The optimal SC condition (T_c ~ 48 K) is unaffected by AF fluctuations.
机译:氢(H)掺杂的LaFeAsO是一种典型的铁基超导体。但是,它的相图超出了标准框架,在载具掺杂后,超导(SC)相接反铁磁(AF)相。相反,SC相被夹在轻度和重度H掺杂区中出现的两个AF相之间。我们在压力下进行了核磁共振(NMR)测量,重点研究了重掺杂H态下的第二个AF相。当施加3.0 GPa的压力时,第二AF阶段被强烈抑制,并且显然转变为高H掺杂态,从而出现“裸”量子临界点(QCP)。量子临界态出现在QCP附近的顺磁状态,但是,AF临界起伏对SC相的影响在QCP附近的窄掺杂态中受到限制。最佳SC条件(T_c〜48 K)不受AF波动的影响。

著录项

  • 来源
    《Physical review》 |2017年第14期|140507.1-140507.5|共5页
  • 作者单位

    Graduate School of Human and Environmental Studies, Kyoto University, Yoshida-Nihonmatsu-cyo, Sakyo-ku, Kyoto 606-8501, Japan;

    Graduate School of Human and Environmental Studies, Kyoto University, Yoshida-Nihonmatsu-cyo, Sakyo-ku, Kyoto 606-8501, Japan;

    Institute for Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan;

    Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan;

    Institute for Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan ,Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号